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Estandía, Saúl and Gazquez, Jaume and Varela del Arco, María and Dix, Nico and Qian, Mengdi and Solanas, Raúl and Fina, Ignasi and Sánchez Barrera, Florencio (2021) Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin films. Journal of materials chemistry C, 9 (10). pp. 3486-3492. ISSN 2050-7526
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Official URL: http://dx.doi.org/10.1039/d0tc05853j
Abstract
Epitaxial orthorhombic Hf_(0.5)Zr_(0.5)O_2 (HZO) films on La_(0.67)Sr_(0.33)MnO_3 (LSMO) electrodes show robust ferroelectricity with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so far. Here, LSMO and other perovskite electrodes are compared. A small amount of orthorhombic phase and low polarization are found in HZO films grown on La-doped BaSnO_3 and Nb-doped SrTiO_3, while null amounts of orthorhombic phase and polarization are detected in films on LaNiO3 and SrRuO_3. The critical effect of the electrode on the stabilized phases is not a consequence of the differences in the electrode lattice parameter. The interface is critical, and engineering the HZO bottom interface on just a few monolayers of LSMO permits the stabilization of the orthorhombic phase. Furthermore, while the specific divalent ion (Sr or Ca) in the manganite is not relevant, reducing the La content causes a severe reduction of the amount of orthorhombic phase and the ferroelectric polarization in the HZO film.
Item Type: | Article |
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Additional Information: | ©2021 Royal Society of Chemistry |
Uncontrolled Keywords: | Materials Science; Multidisciplinary; Physics; Applied |
Subjects: | Sciences > Physics > Materials Sciences > Physics > Solid state physics |
ID Code: | 64690 |
Deposited On: | 12 Apr 2021 17:27 |
Last Modified: | 28 Sep 2022 17:52 |
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