Publication: Ferroionic inversion of spin polarization in a spin-memristor
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2021-03-01
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American Institute of Physics
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Abstract
Magnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and by the inversion of the ferroelectric polarization. Disentangling both effects is of major importance toward exploiting these effects in practical spintronic or spinorbitronic devices. We report on the independent control of ferroelectric and oxygen vacancy switching in multiferroic tunnel junctions with a La_(0.7)Sr_(0.3)MnO_3 bottom electrode, a BaTiO_3 ferroelectric barrier, and a Ni top electrode. We show that the concurrence of interface oxidation and ferroelectric switching allows for the controlled inversion of the interface spin polarization. Moreover, we show the possibility of a spin-memristor where the controlled oxidation of the interface allows for a continuum of memresistance states in the tunneling magnetoresistance. These results signal interesting new avenues toward neuromorphic devices where, as in practical neurons, the electronic response is controlled by electrochemical degrees of freedom.
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©Author(s) 2021
The authors acknowledge funding received from the project Quantox of QuantERA ERA-NET Cofund in Quantum Technologies (Grant Agreement No. 731473) implemented within the European Union's Horizon 2020 Programme. This work was supported by Spanish MINECO through Grant No. MAT2017-87134-C02. V.R. acknowledges the European Union's Horizon 2020 research and innovation programme (Marie Skodowska-Curie IF Grant Agreement No. OXWALD 838693) and the Spanish Ministry of Science, Innovation and Universities through a Juan de la Cierva Incorporacion fellowship (Grant No. IJC2018-035192-I). G.S.-S. acknowledges the financial support from Spanish MICIU (Grant Nos. RTI2018-099054-J-I00 and MICINN IJC2018-038164-I).