Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction

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Rivera Calzada, Alberto Carlos and Gallego Toledo, Fernando and Kalcheim, Yoav and Salev, Pavel and Valle, Javier del and Tenreiro Villar, Isabel and León Yebra, Carlos and Santamaría Sánchez-Barriga, Jacobo and Schuller, Ivan K. (2021) Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction. Advanced electronic materials . ISSN 2199-160X

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Official URL: http://dx.doi.org/10.1002/aelm.202100069




Abstract

One of the most desirable attributes of non-volatile memories and memristors is a fast and non-destructive read out of their resistive state. Prototypical ferroelectric (FE) memories use the bulk photovoltaic response associated to the polarization of FE films to address this requirement by optically sensing binary memory cells. A more advanced type of non-volatile memories is FE tunnel junctions (FTJs). They feature resistive state ratios R_High/R_Low up to 10^6, with a continuum of resistive states accessible, making them promising candidates for neuromorphic computing applications. A novel approach is presented to achieve the optical sensing of the resistive state in a La_(0.7)Sr_(0.3)MnO_3/BaTiO_3/ITO FTJ, by using the Schottky barrier forming in the La_(0.7)Sr_(0.3)MnO_3/BaTiO_3/ITO interface to dramatically enhance the optical response of the 5 nm BaTiO3 (BTO) barrier. Illumination with UV light exceeding the BTO bandgap through the top transparent ITO electrode generates a photovoltaic response in the R_High state, with an open circuit voltage V_oc of 400 mV at 20 K, enabling the optical sensing of the resistive state. In the R_Low state, the Schottky barrier is removed and the photoresponse disappears.


Item Type:Article
Additional Information:

©2021 Wiley
A.R.-C. thanks the economic support of the mobility research program Salvador de Madariaga from Spanish Ministry of Science. Sample fabrication was supported by Spanish AEI through grant MAT201787134-C02. This material was based upon the work supported by the Air Force Office of Scientific Research under award number FA9550-20-1-0242.

Uncontrolled Keywords:Nonvolatile memory; Electroresistance; Films; Transition; Nanoscale; Ferroelectric tunnel junctions; Optical resistive sensing; Photovoltaic effect; Resistive switching; Schottky barrier
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:65716
Deposited On:04 Jun 2021 18:15
Last Modified:08 Jun 2021 17:42

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