Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization

Abstract

Germanium hyperdoped with deep level donors,
such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We use a
combination of non-equilibrium techniques to supersaturate Ge with Te via ion implantation followed by pulsed laser melting (PLM). Typically, liquid N2 (77K) temperatures are used to avoid implantation-induced Ge surface porosity. In this work, alternatively, we report on the use of slightly higher implantation temperatures (143 K) together with an amorphous Si (a-Si) capping layer. We demonstrate that the solid solubility limit of Te in Ge is overcome upon recovering the crystallinity of the material after laser processing.

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