Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films



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Enger, Luiz Guilherme and Flament, Stephane and Bhatti, Imtiaz-Noor and Guillet, Bruno and Sing, Marc Lam Chok and Pierron, Victor and Lebargy, Sylvain and Díez, Jose Manuel and Vera, Arturo and Martínez, Isidoro and Guerrero, Rubén and Pérez García, Lucas and Perna, Paolo and Camarero, Julio and Miranda, Rodolfo and González, María Teresa and Mechin, Laurence (2022) Sub-nT resolution of single layer sensor based on the AMR effect in La_2/_3Sr_1/_3MnO_3 Thin Films. IEEE transactions on magnetics, 58 (2). ISSN 0018-9464

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Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K.

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©2022Institute of Electrical and Electronics Engineers
This work was supported by the European Union Horizon 2020 research and innovation program under Grant 737116.

Uncontrolled Keywords:Giant magnetoresistance; Buffer layer; Surface; Anisotropic magnetoresistance (AMR); Functional oxide; La_2/_3Sr_1/_3MnO_3 thin film; Magnetic sensor; Planar Hall effect bridge (PHEB) sensor; Uniaxial anisotropy
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:71477
Deposited On:29 Mar 2022 11:51
Last Modified:30 Mar 2022 07:52

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