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Tenreiro Villar, Isabel and Rouco Gómez, Víctor and Sánchez Santolino, Gabriel and Gallego, Fernando and León Yebra, Carlos and Rivera Calzada, Alberto Carlos and Schuller, Schuller, Ivan K and Santamaría Sánchez-Barriga, Jacobo (2022) Photovoltaic sensing of a memristor based in LSMO/BTO/ITO ferroionic tunnel junctions. Applied physics letters, 120 (3). ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/5.0071748
Abstract
Memristors based on oxide tunnel junctions are promising candidates for energy efficient neuromorphic computing. However, the low power sensing of the nonvolatile resistive state is an important challenge. We report the optically induced sensing of the resistive state of a memristor based on a La_0.7Sr_0.3MnO_3/BaTiO_3/In_2O_3:SnO_2 (90:10) heterostructure with a 3 nm thick BaTiO3 ferroelectric barrier. The nonvolatile memristive response originates from the modulation of an interfacial Schottky barrier at the La_0.7Sr_0.3MnO_3/BaTiO_3 interface, yielding robust intermediate memristive states. The Schottky barrier produces a photovoltaic response when illuminated with a 3.3 eV UV LED, which depends on the state. The open circuit voltage V_oc correlates linearly with the resistance of each state, enabling active sensing of the memristive state at light power densities as low as 20 mW/cm^2 and temperatures up to 100 K. This opens up avenues for the efficient and minimally invasive readout of the memory states in hybrid devices.
Item Type: | Article |
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Additional Information: | ©2022 AIP PUblishing |
Uncontrolled Keywords: | Applied physics |
Subjects: | Sciences > Physics > Materials Sciences > Physics > Solid state physics |
ID Code: | 72019 |
Deposited On: | 04 May 2022 14:40 |
Last Modified: | 18 Jan 2023 23:00 |
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