High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs

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Algaidy, Sari and Caudevilla Gutiérrez, David and Perez Zenteno, F. and García Hernansanz, Rodrigo and García Hemme, Eric and Olea Ariza, Javier and San Andres Serrano, Enrique and Duarte Cano, S. and Siegel, J. and Gonzalo, J. and Pastor Pastor, David and Prado Millán, Álvaro del (2023) High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs. Materials Science in Semiconductor Processing, 153 . p. 107191. ISSN 1369-8001

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Official URL: https://doi.org/10.1016/j.mssp.2022.107191

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Abstract

We present a detailed investigation on the formation of supersaturated GaAs using Ti+ implantation followed by nanosecond Pulsed Laser Melting (PLM). We have synthesized high-crystal quality supersaturated GaAs layers with concentrations of Ti above the insulator to metal transition (Mott limit). The Ti-implanted concentration depth profiles after PLM obtained by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) show a redistribution of Ti impurities within the first hundred nanometers and superficial concentration up to 1 × 1021 redistrcm-3. Raman spectroscopy of these Ti supersaturated, and regrown GaAs samples shows a sharp crystalline peak and tensile strain due to the Ti lattice incorporation. Scanning Transmission Electron Microscopy (STEM) and high-resolution Transmission Electron Microscopy (TEM) images show a good GaAs crystallinity after the PLM process. Energy-Dispersive X-ray Spectroscopy (EDS) reveals an enhanced Ti signal inside bubble-like structures and an appearance of interface oxide layer with all processed samples.

Item Type:	Article
Additional Information:	CRUE-CSIC (Acuerdos Transformativos 2022) "Authors would like to acknowledge C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation, and the technical. This work was partially supported by the Project MADRIDPV2 (Grant No. P20138/EMT-4308) funded by the Comunidad Autónoma de Madrid with the support of FEDER funds, by the Spanish MINECO (Ministerio de Economía y Competitividad) under grants PID2020-116508RB-100, PID2020-117498RB-I00 and RTI2018-096498-B-I00. One of the authors (S. Algaidy) would also like to acknowledge financial support from Ministry of Education in the Kingdom of Saudi Arabia. D.Caudevilla would also like to acknowledge a grant (PRE2018-083798), financed by MICINN and European Social Fund. F. Perez-Zenteno would like to acknowledge financial support Mexico grant program CONACyT under grant 786327. The authors would like to also acknowledge the services of CAI de Espectroscopia of UCM, (INA-LMA) de Universidad de Zaragoza and C.A.C.T.I de Universidad de Vigo for Raman, FIB-SEM and SIMS, respectively."
Uncontrolled Keywords:	Gallium compounds; Ion implantation; Pulsed laser melting; Supersaturated material; Titanium
Subjects:	Sciences > Physics > Electricity Sciences > Physics > Electronics
ID Code:	75393
Deposited On:	08 Nov 2022 14:24
Last Modified:	03 Feb 2023 07:57

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