Combining freestanding ferroelectric perovskite oxides with two-dimensional semiconductors for high performance transistors

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Puebla, Sergio and Pucher, Thomas and Rouco Gómez, Víctor and Sánchez Santolino, Gabriel and Xie, Yong and Zamora Castro, Víctor and Cuéllar Jiménez, Fabián Andrés and Mompean, Federico and León Yebra, Carlos and Island, Joshua O. and García Hernández, Mar and Santamaría Sánchez-Barriga, Jacobo and Munuera, Carmen and García Hernández, Mar and Castellanos Gómez, Andrés (2022) Combining freestanding ferroelectric perovskite oxides with two-dimensional semiconductors for high performance transistors. Nano letters, 22 (18). pp. 7457-7466. ISSN 1530-6984

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Official URL: http://dx.doi.org/10.1021/acs.nanolett.2c02395




Abstract

We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO_3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-kappa gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO_2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.


Item Type:Article
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© 2022 The Authors. Published by American Chemical Society
European Research Council (ERC) through the project 2DTOPSENSE (GA 755655) European Union’s Horizon 2020 research and innovation program (Graphene Core2-Graphenebased disruptive technologies and Grant Agreement 881603 Graphene Core3-Graphene-based disruptive technologies) EUFLAG-ERA through the project To2Dox (JTC-2019-009) Comunidad de Madrid through the project CAIRO-CM project (Y2020/NMT-6661) Spanish Ministry of Science and Innovation through the projects PID2020-118078RBI00, RTI2018 099054-J-I00 and IJC2018-038164-I, PRE2018-084818 Key Research and Development Program of Shaanxi (Program No.2021KW-02).

Uncontrolled Keywords:Field-effect transistors; MoS_2; Graphene; Heterostructures; Freestanding complex oxide; Ferroelectric perovskite oxide; Ferroelectric field effect transistor; Molybdenum disulfide (MoS_2); Barium titanate (BaTiO_3)
Subjects:Sciences > Physics > Materials
Sciences > Physics > Solid state physics
ID Code:75477
Deposited On:11 Nov 2022 18:58
Last Modified:11 Nov 2022 18:58

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