Transport mechanisms in hyperdoped silicon solar cells

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García Hernansanz, Rodrigo and Duarte Cano, S. and Pérez Zenteno, Francisco José and Caudevilla Gutiérrez, Daniel and Algaidy, Sari and García Hemme, Eric and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Álvaro del and San Andres Serrano, Enrique and Mártil de la Plaza, Ignacio and otros, ... (2022) Transport mechanisms in hyperdoped silicon solar cells. Semiconductor Science and Technology, 38 (12). ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/1361-6641/ac9f63




Abstract

According to intermediate band (IB) theory, it is possible to increase the efficiency of a solar cell by boosting its ability to absorb low-energy photons. In this study, we used a hyperdoped semiconductor approach for this theory to create a proof of concept of different silicon-based IB solar cells. Preliminary results show an increase in the external quantum efficiency (EQE) in the silicon sub-bandgap region. This result points to sub-bandgap absorption in silicon having not only a direct application in solar cells but also in other areas such as infrared photodetectors. To establish the transport mechanisms in the hyperdoped semiconductors within a solar cell, we measured the J-V characteristic at different temperatures. We carried out the measurements in both dark and illuminated conditions. To explain the behavior of the measurements, we proposed a new model with three elements for the IB solar cell. This model is similar to the classic two-diodes solar cell model but it is necessary to include a new limiting current element in series with one of the diodes. The proposed model is also compatible with an impurity band formation within silicon bandgap. At high temperatures, the distance between the IB and the n-type amorphous silicon conduction band is close enough and both bands are contacted. As the temperature decreases, the distance between the bands increases and therefore this process becomes more limiting.


Item Type:Article
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Artículo firmado por 15 autores. © 2022 IOP Publishing Ltd. The authors would like to thank the Physical Sciences Research Assistance Centre (CAI de Técnicas Físicas) of the Complutense University of Madrid. This study was partially funded by Project MADRID-PV2 (P2018/EMT-4308), with aid from the Regional Government of Madrid and the ERDF, by the Spanish Ministry of Science and Innovation/National Research Agency (MCIN/AEI) under Grants TEC2017- 84378-R, PID2019-109215RB-C41, PID2020-116508RB-I00 and PID2020-117498RB-I00. Daniel Caudevilla would like to express his thanks for Grant PRE2018-083798, provided by the MICINN and the European Social Fund. Francisco Pérez Zenteno would also like to express his thanks for Grant 984933, provided by CONACyT (Mexico).

Uncontrolled Keywords:Carrier transport; Heterojunction; Efficiency; Transition; Contacts; Limit
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:76205
Deposited On:12 Jan 2023 12:58
Last Modified:12 Jan 2023 12:58

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