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Electrical transport properties in Ge hyperdoped with Te



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Caudevilla Gutiérrez, Daniel and Algaidy, Sari and Pérez Zenteno, Francisco José and Duarte Cano, S. and García Hernansanz, Rodrigo and Olea Ariza, Javier and San Andres Serrano, Enrique and Prado Millán, Álvaro del and Barrio, R. and Torres, I. and García Hemme, Eric and Pastor, D. (2022) Electrical transport properties in Ge hyperdoped with Te. Semiconductor Science and Technology, 37 (12). ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/1361-6641/ac9a67


In this work we have successfully hyperdoped germanium with tellurium with a concentration peak of 10(21) cm(-3). The resulting hyperdoped layers show good crystallinity and sub-bandgap absorption at room temperature which makes the material a good candidate for a new era of complementary metal-oxide-semiconductor-compatible short-wavelength-infrared photodetectors. We obtained absorption coefficients ci higher than 4.1 x 10(3) cm(-1) at least up to 3 mu m. In this study we report the temperature-dependency electrical properties of the hyperdoped layer measured in van der Pauw configuration. The electrical behaviour of this hyperdoped material can be explained with an electrical bilayer coupling/decoupling model and the values for the isolated hyperdoped layer are a resistivity of 4.25 x 10(-3) Omega.cm with an electron-mobility around -100 cm(2) V-1 s(-1).

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© 2022 IOP Publishing Ltd. Authors wish to acknowledge assistance from CAI de Técnicas Físicas (Unidad de Implantación Iónica) and CAI de Técnicas Químicas (Espectroscopía Raman y Correlación) from the Universidad Complutense de Madrid with the Ion Implantations and Raman measurements, respectively. We also acknowledge Servicio de Nanotecnología y Análisis de Superficies del CACTI de la Universidad de Vigo for ToF-SIMS measurements and ICTS-CNM from Madrid for the SEM images. This work was partially supported by the Projects MADRID-PV2 (P2018/EMT-4308) funded by the Comunidad Autónoma de Madrid with the support from FEDER Funds and Projects SCCell (PID2020-116508RB-I00), HyperPHIR (PID2020-117498RB-I00) and SCALED (PID2019-109215RB-C42), funded by the Spanish Ministry of Science and Innovation. D Caudevilla would also acknowledge the Grant PRE2018-083798, financed by MICINN and European Social Fund. F Pérez-Zenteno would also like to acknowledge Grant 786327 form Mexican grants program CONACyT.

Uncontrolled Keywords:Implantation; Silicon
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:76207
Deposited On:12 Jan 2023 13:02
Last Modified:18 Jan 2023 11:40

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