IndexAuthor

Castaldini, A. and Cavallini, A. and Fraboni, B. and Polenta, L. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (1996) Cathodoluminescence and photoinduced current spectroscopy studies of defects in Cd_(0.8)Zn_(0.2)Te. Physical Review B, 54 (11). pp. 7622-7625. ISSN 1098-0121

Castaldini, A. and Cavallini, A. and Polenta, L. and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier (2002) Characterization of thin layers of n- and p-type GaN. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 91 . pp. 308-312. ISSN 0921-5107

Castaldini, A. and Cavallini, A. and Fraboni, B. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (1997) Comparison of electrical and luminescence data for the A center in CdTe. Applied Physics Letters, 69 (23). pp. 3510-3512. ISSN 0003-6951

Castaldini, A. and Cavallini, A: and Fraboni, B. and Polenta, L. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (1996) Compensation and deep levels in II-VI compounds. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 42 (1-mar). pp. 302-305. ISSN 0921-5107

Castaldini, A. and Cavallini, A. and Fraboni, B and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (1998) Deep energy levels in CdTe and CdZnTe. Journal of Applied Physics, 83 (4). pp. 2121-2126. ISSN 0021-8979

Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Castaldini, A. and Cavallini, A. and Polent, L. (2003) Defect assessment of Mg-doped GaN by beam injection techniques. Journal of Applied Physics, 94 (12). pp. 7470-7475. ISSN 0021-8979

Castaldini, A. and Cavallini, A. and Fraboni, B and Piqueras de Noriega, Javier and Polenta, L. (1996) Defect energy levels in Cd-based compounds. In Defect Recognition And Image Processing In Semiconductors 1995. Conference Series- Institute of Physics (149). IOP Publishing LTD, Bristol, pp. 115-120. ISBN 0-7503-0372-7

Castaldini, A. and Cavallini, A. and Polenta, L. and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier (2002) Electrical and optical characterization of GaN HVPE layers related to extended defects. Journal of Physics-Condensed Matter, 14 (48). pp. 13095-13104. ISSN 0953-8984

Castaldini, A. and Cavallini, A. and Fraboni, B and Piqueras de Noriega, Javier and Méndez Martín, Bianchi (1994) Influence of defects on diffusion length inhomogeneity in gaas-te wafers. In Defect Recognition and Image Processing in Semiconductors and Devices. Conference Series- Institute of Physics (135). IOP Publishing LTD, pp. 207-210. ISBN 0-7503-0294-1

Castaldini, A. and Cavallini, A. and Fraboni, B. and Piqueras de Noriega, Javier (1994) Junction spectroscopy of highly doped GaAs: detection of the EL2 trap. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 28 (1-mar). pp. 397-399. ISSN 0921-5107

Castaldini, A. and Cavallini, A. and Fraboni, B. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (1997) Midgap traps related to compensation processes in CdTe alloys. Physical Review B, 56 (23). pp. 14897-14900. ISSN 1098-0121

Castaldini, A. and Calvallini, A,. and Fraboni, B and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (1994) Spatial-distribution of recombination centers in gaaste - effects of the doping level. Journal of Applied Physics, 76 (2). pp. 987-992. ISSN 0021-8979

Castaldini, A. and Cavallini, A. and Fraboni, B. and Piqueras de Noriega, Javier (1995) The EL2 trap in highly doped GaAs:Te. Journal of Applied Physics, 78 (11). pp. 6592-6595. ISSN 0021-8979

Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Castaldini, A. and Cavallini, A. and Polenta, L. (2003) Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN. Journal of Applied Physics, 94 (4). pp. 2341-2346. ISSN 0021-8979

López, I. and Castaldini, A. and Cavallini, A. and Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (2014) β-Ga₂O₃ nanowires for an ultraviolet light selective frequency photodetector. Journal of physics D-aplied physics, 47 (41). ISSN 0022-3727