IndexAuthor

Pampillón Arce, María Ángela (2010) Estudio de tecnologías de oxidación de láminas delgadas de gadolinio metálico para su aplicación como aislante de puerta en MOSFETs. [Trabajo Fin de Máster]

Wirths, S. and Pampillón Arce, María Ángela and San Andres Serrano, Enrique and Starge, D. and Tiedemann, A.T. and Mussler, G. and Fox, A. and Breuer, U. and Hartmann, J-M. and Mantl, S. and Buca, D. (2014) Growth and interface engineering of highly strained low bandgap group IV semiconductors. 2014 7th International Silicon-Germanium Technology and device meetinTING (ISTDM) . pp. 13-14.

Pampillón Arce, María Ángela (2017) Growth of high permittivity dielectrics by high pressure sputtering from metallic targets. [Thesis]

Pampillón Arce, María Ángela and San Andres Serrano, Enrique and Feijoo,, P. C. and Fierro, J. L. G. (2017) High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation. Semiconductor Science and Technology, 32 (3). ISSN 0268-1242

Feijoo, P.C. and Pampillón Arce, María Ángela and San Andrés Serrano, Enrique and Fierro, J.L.G. (2015) Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering. Thin Solid Films, 593 . pp. 62-66. ISSN 0040-6090

Lucía Mulas, María Luisa and Pampillón Arce, María Ángela and San Andrés Serrano, Enrique and Feijoo Guerrero, Pedro Carlos (2013) Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon. Journal of Vacuum Science & Technology B, 31 (1). ISSN 1071-1023

Gao, Z. and Romero, M.F. and Pampillón Arce, María Ángela and San Andrés Serrano, Enrique and Calle, F. (2015) Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric. Proceedings of the of the 2015 10th spanish conference on electron devices . p. 78. ISSN 2163-4971